Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)

Interface structure of graphene on SiC(0001)

Graphene films prepared by heating the SiC(0001̄) surface (the C-face of the {0001} surfaces) in a vacuum or in a Si-rich environment are compared. It is found that different interface structures occur for the two situations. The former yields a well known 3 × 3 reconstructed interface, whereas the latter produces an interface with √ 43 ×√43-R ± 7.6◦ symmetry. This structure is shown to contain ...

Graphene formation mechanisms on 4H-SiC(0001)

Studies of Li intercalation of hydrogenated graphene on SiC(0001)

The effects of Li deposition on hydrogenated bilayer graphene on SiC(0001) samples, i.e. on quasi-freestanding bilayer graphene samples is studied using low energy electron microscopy, micro-low-energy electron diffraction and photoelectron spectroscopy. After deposition, some Li atoms form islands on the surface creating defects that are observed to disappear after annealing. Some other Li ato...

The physics of epitaxial graphene on SiC(0001).

Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole,...

Chemically resolved interface structure of epitaxial graphene on SiC(0001).

Atomic-layer 2D crystals have unique properties that can be significantly modified through interaction with an underlying support. For epitaxial graphene on SiC(0001), the interface strongly influences the electronic properties of the overlaying graphene. We demonstrate a novel combination of x-ray scattering and spectroscopy for studying the complexities of such a buried interface structure. T...